* RDS(on) = 28 mΩ (Typ. ) @ VGS = 10 V, ID = 38 A
* Ultra Low Gate Charge (Typ. Qg = 218 nC)
* Low Effective Output Capacitance (Typ. Coss(eff.) = 914 pF)
such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.
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G
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TO-3PN
MOS.
The SupreMOS® MOSFET is ON Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process co.
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